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| PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt ZTX550 ZTX551 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -60 -45 -5 -2 -1 E-Line TO92 Compatible ZTX550 ZTX551 -80 -60 UNIT V V V A A W mW/ C C 1 5.7 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT 100 15 150 ZTX550 MIN. Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency -60 -45 -5 -0.1 -0.1 -0.25 -1.1 300 50 10 150 MAX. MIN. -80 -60 -5 ZTX551 MAX. UNIT V V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-45V VCB=-60V VEB=-4V IC=-150mA, IB=-15mA* IC=-150mA, IB=-15mA* IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* -0.1 -0.1 -0.35 -1.1 150 A A A V V MHz IC=-50mA, VCE=-10V f=100MHz 3-194 ZTX550 ZTX551 TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain (%) -0.8 80 60 ZTX551 VCE(sat) - (Volts) -0.6 ZTX550 -0.4 IC/IB=10 -0.2 ZTX551 40 20 0 -0.01 -0.1 -1 -10 -0.001 -0.01 -0.1 -1 -10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC -1.4 -1.0 VBE - (Volts) VBE(sat) - (Volts) -1.2 -0.9 -1.0 -0.8 -0.8 -0.7 -0.6 -0.01 -0.1 -0.6 -1 -10 -0.01 -0.1 -1 -10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(on) v IC 10 Single Pulse Test at Tamb=25C VBE(sat) v IC IC - Collector Current (Amps) 1 ZTX550 D.C. 1s 100ms 10ms 1.0ms 0.3ms 0.1ms 0.1 0.01 0.1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area ZTX551 3-195 |
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